An ideal long-base Si p-n diode has Na = 1017 cm-3, Nd = 7x1016 cm-3 and...

An ideal long-base Si p-n diode has N_a = 10¹⁷ cm^-3, N_d = 7x10¹⁶ cm^-3 and a cross-sectional area of 10^-3 cm². (i) If τ_n = τ_p = 1 µs, calculate the current flowing through the junction under an applied bias of 0.4V. Repeat your calculation for a temperature of 500 K. (ii) Sketch the thermal equilibrium band edge diagram of the p-n junction for both temperatures

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Manojponduru answered 2 years ago

A p-n step junction is made in silicon with Na = 1.5x1016 cm-3 and Nd =...

A p-n step junction is made in silicon with Na = 1.5x1016 cm-3 and Nd = 6.5x1016 cm-3. Assume T = 300K. Calculate the following: (a) the built-in potential Vbi (b) the total depletion layer width W and depletion into the n (Wn) and p (Wp) sides at zero bias (c) the maximum electric field at zero bias (d) the maximum electric field at 7V reverse bias (e) Sketch the energy band diagram, charge density distribution, electric field distribution, and...

1) Given a silicon p-n junction diode. Consider there are ND = 1E16 cm-3 in its...

1) Given a silicon p-n junction diode. Consider there are ND = 1E16 cm-3 in its conduction band while NA = 1E17 cm-3 . (i) At thermal equilibrium, calculate built-in potential (Vbi) using band diagram (no formulae). On the n-side, estimate the electron concentration and flux at q*Vbi above the conduction band. (ii) Now a forward bias VA is applied. On the n-side, estimate the electron concentration and flux at the same energy level at part (i). Hence show that...

Consider a Si p-n junction at T=300K with the following parameters: Na=5x1017cm-3, Nd=5x1017cm-3 Dn=25 cm2 /s...

Consider a Si p-n junction at T=300K with the following parameters: Na=5x1017cm-3, Nd=5x1017cm-3 Dn=25 cm2 /s D P=10 cm2 /s τn=5x10-7 s τP=5x10-7 s. Let the photocurrent density be 20 mA/cm2 . (a) Calculate the maximum power delivered to the load assuming that the fill factor is 0.8. (b) By what factor will the output power increase from (a) if the solar intensity is increase by a factor of 10 due to light concentration. Comment on your results

Consider a Si p-n junction connected p-type and n-type semiconductors each doped 1017 /cm3 concentration, in...

Consider a Si p-n junction connected p-type and n-type semiconductors each doped 1017 /cm3 concentration, in temperature 50K, 350K, 650K Suppose occur energy state of conduction band quantization due to the junction make very small. If Si p-n junction has only three DOS(density of state) in conduction band and valence band, Discuss band diagrams and I-V curve.

calculate built-in potential, maximum electric field and width of the depletion layer in Si p-n diode...

calculate built-in potential, maximum electric field and width of the depletion layer in Si p-n diode doped with donors and acceptors to concentration of 2x10^17cm^-3 and 5x10^16 cm^-3 respectively estimate the maximum voltage which can be safely applied to the diode descibed above estimate density of reverse current in the diode desribed in top if the diffusion constants and the diffusion lengths of holes and electrons are about 30cm^2/s and 100mm respectively

Si p-n junctions are often used as temperature sensors.Draw relevant schematic below and calculate the diode...

Si p-n junctions are often used as temperature sensors.Draw relevant schematic below and calculate the diode voltage if the temperature is raised by deltaT= 20c above the room temp. Assume the turn-on voltage for the diode equals 660 mV at room temperature while conducting 10uA current. please show all steps.

For a silicon one-sided abrupt junction with NA = 2 × 10^19 cm–3 and ND =10^18...

For a silicon one-sided abrupt junction with NA = 2 × 10^19 cm–3 and ND =10^18 cm–3, calculate the junction capacitance at zero bias and a reverse bias of 4 V (T = 300 K). Draw the flat energy band diagram

Consider an infinitely large, homogeneous n-type Si at T = 300K doped to Nd = 2.5...

Consider an infinitely large, homogeneous n-type Si at T = 300K doped to Nd = 2.5 x 1015cm-3 . Assume that, for t < 0, the semiconductor is in thermal equilibrium and that, for t ≥ 0, a uniform generation rate exists in the crystal. (a) Determine the excess minority carrier concentration as a function of time assuming the condition of low-level injection. (b) Assume a generation rate of 4 x 1020 cm-3 s -1 . And let τpo =...

Given a MOS capacitor on an n-type semiconductor (relative permittivity =10, ND= 1E13 cm-3)and using an...

Given a MOS capacitor on an n-type semiconductor (relative permittivity =10, ND= 1E13 cm-3)and using an unknown gate dielectric (relative permittivity εr=25). Sketch the C-V plot and label the accumulation, depletion, inversion regions, and the approximate location of the flatband and threshold voltages. Calculate the dielectric thickness and the depletion width in inversion given that the high-frequency capacitance is 250 nF/cm^2 in accumulation and is 50 nF/cm^2 at onset of strong inversion (where minimum capacitance exists). [Ans: dielectric thickness: 88.5...

Plot an ideal C-V curve for a Si- SiO2 MOS capacitor at 300 K with NA=5x1015...

Plot an ideal C-V curve for a Si- SiO2 MOS capacitor at 300 K with NA=5x1015 cm-3, d=3 nm (specify Cox, Cmin, CFB and VT). If the metal work function is 4.5 eV, q?=4.05 eV, Qf/q=1011 cm-2, Qm/q=1010 cm-2, Qof/q=5x1010 cm-2, and Qit=0, plot the corresponding CV curve (specify VFB and the new VT).

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