Given a MOS capacitor on an n-type semiconductor (relative permittivity =10, ND= 1E13 cm-3)and using an...

Given a MOS capacitor on an n-type semiconductor (relative permittivity =10, ND= 1E13 cm-3)and using an unknown gate dielectric (relative permittivity εr=25). Sketch the C-V plot and label the accumulation, depletion, inversion regions, and the approximate location of the flatband and threshold voltages. Calculate the dielectric thickness and the depletion width in inversion given that the high-frequency capacitance is 250 nF/cm^2 in accumulation and is 50 nF/cm^2 at onset of strong inversion (where minimum capacitance exists).

[Ans: dielectric thickness: 88.5 nm, dep cap = 62.5 nF/cm2, dep width = 0.1415 um]

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genius_generous answered 2 years ago

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Given a MOS capacitor on an n-type semiconductor (relative permittivity =10, ND= 1E13 cm-3)and using an...

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