Consider a Si p-n junction at T=300K with the following parameters: Na=5x1017cm-3, Nd=5x1017cm-3 Dn=25 cm2 /s...

Consider a Si p-n junction at T=300K with the following parameters: Na=5x1017cm-3, Nd=5x1017cm-3 Dn=25 cm2 /s D P=10 cm2 /s τn=5x10-7 s τP=5x10-7 s. Let the photocurrent density be 20 mA/cm2 . (a) Calculate the maximum power delivered to the load assuming that the fill factor is 0.8. (b) By what factor will the output power increase from (a) if the solar intensity is increase by a factor of 10 due to light concentration. Comment on your results

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