For a silicon one-sided abrupt junction with NA = 2 × 10^19 cm–3 and ND =10^18...

For a silicon one-sided abrupt junction with NA = 2 × 10^19 cm–3 and ND =10^18 cm–3, calculate the junction capacitance at zero bias and a reverse bias of 4 V (T = 300 K). Draw the flat energy band diagram

Expert Solution

genius_generous answered 2 years ago

A p-n step junction is made in silicon with Na = 1.5x1016 cm-3 and Nd =...

A p-n step junction is made in silicon with Na = 1.5x1016 cm-3 and Nd = 6.5x1016 cm-3. Assume T = 300K. Calculate the following: (a) the built-in potential Vbi (b) the total depletion layer width W and depletion into the n (Wn) and p (Wp) sides at zero bias (c) the maximum electric field at zero bias (d) the maximum electric field at 7V reverse bias (e) Sketch the energy band diagram, charge density distribution, electric field distribution, and...

Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration Nd...

Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration Nd (in cm^?3 ) in n-side is Nd = 5×10^15 /cm3 and the acceptor impurity concentration Na in the p-side is Na = 817 ×10^15 /cm3 Given: the diode area A = 2×10^?3 cm2 , ni = 10^10/cm3 , ?n = 10^?8 s and ?p = 10^?7 s, Refer to text books, lecture notes, etc for other parameters such Dn, etc., and state clearly in...

1) Given a silicon p-n junction diode. Consider there are ND = 1E16 cm-3 in its...

1) Given a silicon p-n junction diode. Consider there are ND = 1E16 cm-3 in its conduction band while NA = 1E17 cm-3 . (i) At thermal equilibrium, calculate built-in potential (Vbi) using band diagram (no formulae). On the n-side, estimate the electron concentration and flux at q*Vbi above the conduction band. (ii) Now a forward bias VA is applied. On the n-side, estimate the electron concentration and flux at the same energy level at part (i). Hence show that...

An ideal long-base Si p-n diode has Na = 1017 cm-3, Nd = 7x1016 cm-3 and...

An ideal long-base Si p-n diode has Na = 1017 cm-3, Nd = 7x1016 cm-3 and a cross-sectional area of 10-3 cm2. (i) If τn = τp = 1 µs, calculate the current flowing through the junction under an applied bias of 0.4V. Repeat your calculation for a temperature of 500 K. (ii) Sketch the thermal equilibrium band edge diagram of the p-n junction for both temperatures

Consider a Si p-n junction at T=300K with the following parameters: Na=5x1017cm-3, Nd=5x1017cm-3 Dn=25 cm2 /s...

Consider a Si p-n junction at T=300K with the following parameters: Na=5x1017cm-3, Nd=5x1017cm-3 Dn=25 cm2 /s D P=10 cm2 /s τn=5x10-7 s τP=5x10-7 s. Let the photocurrent density be 20 mA/cm2 . (a) Calculate the maximum power delivered to the load assuming that the fill factor is 0.8. (b) By what factor will the output power increase from (a) if the solar intensity is increase by a factor of 10 due to light concentration. Comment on your results

10. Consider a step pn junction made of silicon. Carrier lifetimes are given as \tau_n =...

10. Consider a step pn junction made of silicon. Carrier lifetimes are given as \tau_n = 10^{-7} sτn=10−7s and \tau_p = 10^{-7} sτp=10−7s. Assume long diode, i.e. long quasi-neutral regions. What must be the doping density ratio, N_A/N_DNA/ND, in order to have 95% of the total current in the depletion region carried by electrons? Answers within 5% error will be considered correct. 11. Consider two ideal pn junctions at T = 300\: KT=300K with exactly the same physical parameters except...

Given a MOS capacitor on an n-type semiconductor (relative permittivity =10, ND= 1E13 cm-3)and using an...

Given a MOS capacitor on an n-type semiconductor (relative permittivity =10, ND= 1E13 cm-3)and using an unknown gate dielectric (relative permittivity εr=25). Sketch the C-V plot and label the accumulation, depletion, inversion regions, and the approximate location of the flatband and threshold voltages. Calculate the dielectric thickness and the depletion width in inversion given that the high-frequency capacitance is 250 nF/cm^2 in accumulation and is 50 nF/cm^2 at onset of strong inversion (where minimum capacitance exists). [Ans: dielectric thickness: 88.5...

Consider a slab of p tupe semiconductor with doping of Na= 10^17 cm^-3. Use the following...

Consider a slab of p tupe semiconductor with doping of Na= 10^17 cm^-3. Use the following parameters: Eg=1.1 eV, ni= 10^10 cm^-3, Nc= 10^18 cm^-3, Nv= 10^18 cm^-3. Assume equal carrier lifetimes for electrons and holes = 1us. Assume equal monilitoes for electrons and holes = 300cm^2/Vs. i) what is the equilibrium hole and electron concentration? ii) Excess carriers are geneeated with a beneeation eate G= 10^20 cm^-3s^-1. what is the excess electron and hole density? iii) what is the total hoel...

18. A box is to be made out of a 10 cm by 16 cm piece...

18. A box is to be made out of a 10 cm by 16 cm piece of cardboard. Squares of side length ? cm will be cut out of each corner, and then the ends and sides will be folded up to form a box with an open top. Find the maximum volume of the box. 19. A rectangle is inscribed with its base on the x-axis and its upper corners on the 2 parabola ? = 8 − ?...

1-Jan2010 ND 4-Jan-2010 92.5500 3-Jan-2011 81.5600 2-Jan-2012 ND 3-jan-2012 76.6700 1-Jan-2013 ND 2-Jan-2013 87.1000 1-Jan-2014 ND...

1-Jan2010 ND 4-Jan-2010 92.5500 3-Jan-2011 81.5600 2-Jan-2012 ND 3-jan-2012 76.6700 1-Jan-2013 ND 2-Jan-2013 87.1000 1-Jan-2014 ND 2-Jan-2014 104.8400 1-Jan-2015 ND 2-Jan-2015 120.2000 1-Jan-2016 ND 4-Jan-2016 119.3000 2-Jan-2017 ND 3-Jan-2017 117.6800 1-Jan-2018 ND 2-Jan-2018 112.1800 1-Jan-2019 ND 2-Jan-2019 109.2200 1-Jan-2020 ND 2-Jan-2020 108.4300 Look at the data for the Japanese yen from 2000 to the present. Assume that you were in Tokyo for New Year’s Eve from January 1, 2010 to January 1 this year and bought a bento (box lunch)...

Question