Consider an infinitely large, homogeneous n-type Si at T = 300K doped to Nd = 2.5...

Consider an infinitely large, homogeneous n-type Si at T = 300K doped to Nd = 2.5 x 1015cm-3 . Assume that, for t < 0, the semiconductor is in thermal equilibrium and that, for t ≥ 0, a uniform generation rate exists in the crystal. (a) Determine the excess minority carrier concentration as a function of time assuming the condition of low-level injection. (b) Assume a generation rate of 4 x 1020 cm-3 s -1 . And let τpo = 10-7 s. Determine the excess minority carrier concentration at (i) t = 0, (ii) t = 10-7 s, (iii) t = 5 x 10-7 s, and (iv) t → ∞. (c) Using Excel or Matlab, Plot the excess carrier concentration for t ≥ 0.

Expert Solution

genius_generous answered 2 years ago

Consider a Si p-n junction at T=300K with the following parameters: Na=5x1017cm-3, Nd=5x1017cm-3 Dn=25 cm2 /s...

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