1) Given a silicon p-n junction diode. Consider there are ND = 1E16 cm-3 in its...

1) Given a silicon p-n junction diode. Consider there are ND = 1E16 cm-3 in its conduction band while NA = 1E17 cm-3 . (i) At thermal equilibrium, calculate built-in potential (Vbi) using band diagram (no formulae). On the n-side, estimate the electron concentration and flux at q*Vbi above the conduction band. (ii) Now a forward bias VA is applied. On the n-side, estimate the electron concentration and flux at the same energy level at part (i). Hence show that the current will be exponentially dependent on the forward bias voltage.

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genius_generous answered 1 year ago

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