N-type silicon is doped with phosphorus, and the ionization potential of phosphorus is 0.044 eV. Find...

N-type silicon is doped with phosphorus, and the ionization potential of phosphorus is 0.044 eV.

Find the Fermi level position and concentration at room temperature when the impurity is half ionized.

Expert Solution

genius_generous answered 2 years ago

Phosphorus is diffused into a thick slice of silicon with no previous phosphorus in it. If...

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