A Si npn transistor at T = 300K has an area of 10-3 cm2 , neutral...

A Si npn transistor at T = 300K has an area of 10^-3 cm² , neutral base width of 1µm, and doping concentrations of N_E= 10¹⁸ cm^-3, N_B = 10¹⁷ cm^-3, N_C = 10¹⁶ cm^-3. Other semiconductor parameters are D_B= D_E =20 cm²/s, τ_E0= τ_B0= =10^-7s, and τ_C0=10^-6 s. Assuming the transistor is biased in the active region and the recombination factor is unity, calculate current for (a) V_BE = 0.5V; (b)I_E =1.5 mA, (c) I_B = 2µA

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genius_generous answered 1 year ago

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