Consider a slab of p tupe semiconductor with doping of Na= 10^17 cm^-3. Use the following...

Consider a slab of p tupe semiconductor with doping of Na= 10^17 cm^-3. Use the following parameters: Eg=1.1 eV, ni= 10^10 cm^-3, Nc= 10^18 cm^-3, Nv= 10^18 cm^-3. Assume equal carrier lifetimes for electrons and holes = 1us. Assume equal monilitoes for electrons and holes = 300cm^2/Vs.

i) what is the equilibrium hole and electron concentration?

ii) Excess carriers are geneeated with a beneeation eate G= 10^20 cm^-3s^-1. what is the excess electron and hole density?

iii) what is the total hoel and ecteim denaity after this generation process?

iv) what is the enehry band diagram after this generation process?

v) what is the diffusion length of electrons and holes?

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Manojponduru answered 1 year ago

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