MOS Capacitor. If i have a MOS capactitor with: tox=0,1 µm, T=300 K, ND= 1015cm-3 ....

MOS Capacitor. If i have a MOS capactitor with: tox=0,1 µm, T=300 K, N_D= 10¹⁵cm^-3 . Supposing ideal contact, and null flat band potential V_FB=0 V. How do I find the substratum electric potential (φ_n)?

How do I obtain the depletion region width in micrometers when the surface potential of the interface between Silicon and Oxide φ(x=0) =φ_S its equal to reverse substrate potential (φ_S= - φ_n)? Is there an electric field E_s under the same condition of (φ_S= - φ_n) ?

Can V_GB=V_T in (φ_S= - φ_n)?

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Expert Solution

Manojponduru answered 1 year ago

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