In: Electrical Engineering
MOS Capacitor. If i have a MOS capactitor with: tox=0,1 µm, T=300 K, ND= 1015cm-3 . Supposing ideal contact, and null flat band potential VFB=0 V. How do I find the substratum electric potential (φn)?
How do I obtain the depletion region width in micrometers when the surface potential of the interface between Silicon and Oxide φ(x=0) =φS its equal to reverse substrate potential (φS= - φn)? Is there an electric field Es under the same condition of (φS= - φn) ?
Can VGB=VT in (φS= - φn)?