For a particular DRAM design the cell capacitance is C,=50fF, Vpp=5 V and V=1.4 V. Each cell represents a capacitive load on the bit line of 2fF. The sense amplifier and other circuitry attached to the bit line has a 20fF. What is the maximum number of cells that can be attached to a bit line while ensuring a minimum bit line signal of 0.1 V? How many bits of row addressing can be used? If the sense amplifier gain is increased by a factor of 5 how many word line address bits can be accommodated.
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What is the purpose of the status register in PIC microcontroller architecture? Draw this register and define the function of each of its bits.
Find C, Z, and DC flag bits for each of the following codes:
a)
MOVLW 9FH
ADDLW 61H
C = , Z = , DC =
b)
MOVLW 82H
ADDLW 22H
C = , Z = , DC =
c)
MOVLW 67H
ADDLW 99H
C = , Z = , DC =
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When plotting the natural log of the temperature error function versus time, what does the slope of this relationship represent?
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What is electroporation? What are the two types of electroporation? Give two applications for each type. Comment on the electric pulse duration and magnitude used for introduction of small molecules vs. larger molecules?
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8. It is required to produce an illumination of 100 lux in a factory hall 30 m by 15 m. Assume that the maintenance factor is 0.8, coefficient of utilization is 0.4 and efficiency of lamp is 14 lm/W. Suggest the suitable rating, the number of lamps and their possible arrangement. The sizes of the lamps available are 100, 250, 400 and 500 W.
ANS [40 lamps of 250 W in 5 rows]
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Physics behind D.C motor:
How the gain K and time constant are related to the armature
resistance and inductance in a DC
motor?
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When i went to the lab, and measure the output voltage of the 7805 VOLTAGE REGULATORS by connecting it to either 12 voltage or 9 voltage, The output was the same which is 4.94.
I need the equation to calculate and calculate it with full steps mathematically
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can you provide me by two questions with answers for fundamental of electrical enginnering. I want to test an expert I want questions for testing an expert send the question with answers make it clear separat question and answer
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There is a dielectric sphere with radius a [m] and relative
permittivity εr. This dielectric has a uniform charge density
ρ
[C / m3)
This dielectric sphere has an inner radius b [m] (a <b).
It shall be surrounded by a hollow grounded conductor. The center
of the dielectric sphere
Answer the following questions as if the centers are the
same.
(1) Find the electric flux density and electric field at each
location.
(2) Find the energy density stored in each place.
(3) Find the total energy stored inside the conductor.
(4) Find the force acting on the surface area of the
conductor.
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CHAPTER 13: DISCRETE-TIME SIGNAL (TEXTBOOK SIGNALS AND SYSTEM BY MAHMOOD NAHVI)
12. In an LTI system, x(n) is the input and h(n) is the
unit-sample response. Find and sketch the
output y(n) for the following cases:
i) x(n) = 2[u(n) - u(n - 11)] and h(n) = 0.5nu(n)
ii) x(n) = 2[u(n) - u(n - 11)] and h(n) = (-0.5)nu(n)
iii) x(n) = u(n) - u(n - 5) and h(n) = 0.5|n|u(n)
iv) x(n) = u(n) - u(n - 5) and h(n) = (-0.5)|n|u(n)
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When electrical leakage occurs in a circuit, which of the following protective device will NOT Trip?
A. RCBO
B. MCB
C. RCD
D. All of the above
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When i went to the lab, and measure the output voltage of the VOLTAGE REGULATORS in the Arduino Uno by connecting it to either 12 voltage or 9 voltage, The output was the same which is 4.94.
I need the equation to calculate and calculate it with full steps mathematically
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An 8-bit A/D Converter on a chip using 0.18um technology with a Vdd=1.8V is built using minimum size transistors (l=0.18um and w=0.36um). It has 22 transistors per bit in conversion and 128 transistors used for memory. The activity factor in the conversion modules is 0.1, while the activity factor in the memory blocks is 0.02. Assume each transistor contributes 3fF/um of gate capacitance and 0.24fF/um of diffusion capacitance. Estimate the switching power without capacitance when operating at 1MHz.
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