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In: Electrical Engineering

For a particular DRAM design the cell capacitance is C,=50fF, Vpp=5 V and V=1.4 V. Each...

For a particular DRAM design the cell capacitance is C,=50fF, Vpp=5 V and V=1.4 V. Each cell represents a capacitive load on the bit line of 2fF. The sense amplifier and other circuitry attached to the bit line has a 20fF. What is the maximum number of cells that can be attached to a bit line while ensuring a minimum bit line signal of 0.1 V? How many bits of row addressing can be used? If the sense amplifier gain is increased by a factor of 5 how many word line address bits can be accommodated.

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Manojponduru answered 7 months ago
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