In an n-type semiconductor, the Fermi level lies 0.5 eV below the conduction band. If the...

In an n-type semiconductor, the Fermi level lies 0.5 eV below the conduction band. If the conduction of donor atoms is tripled, find the new position of the Fermi level, given KT = 0.03 eV.

Expert Solution

genius_generous answered 2 years ago

describe energy band structure and Fermi distribution function of intrinsic semiconductor, n-type semiconductor and p-type semiconductor.

The fermi function value is non zero within the band gap of a semiconductor. if the...

The fermi function value is non zero within the band gap of a semiconductor. if the fermi level is within the band gap. Do you expect electrons or holes to populate energy states within the band gap? If yes, why? If not, why?

Doping changes the Fermi energy of a semiconductor. Consider silicon, with a gap of 1.11 eV...

Doping changes the Fermi energy of a semiconductor. Consider silicon, with a gap of 1.11 eV between the top of the valence band and the bottom of the conduction band. At 300 K the Fermi level of the pure material is nearly at the midpoint of the gap. Suppose that silicon is doped with donor atoms, each of which has a state 0.13 eV below the bottom of the silicon conduction band, and suppose further that doping raises the Fermi...

A simple insulator has a band gap of 4.0 eV, and the Fermi energy may be...

A simple insulator has a band gap of 4.0 eV, and the Fermi energy may be taken to reside in the middle of the gap. Estimate the probability of an electron at room temperature being in the conduction band.

Solar cell A uses a semiconductor with a band gap of 1.1 eV. Solar cell B...

Solar cell A uses a semiconductor with a band gap of 1.1 eV. Solar cell B uses a semiconductor with a band gap of 2.0 eV. Either cell is thick enough to absorb all the light above its band gap energy. Both cells can work together simultaneously with one on top of the other to operate more efficiently in a small space. But which cell has to be on top (first to receive sunlight) for both to work simultaneously and...

the effect of changing the energy level on (the density of states) in the conduction band...

the effect of changing the energy level on (the density of states) in the conduction band (gc(E)). course:semiconductor devices thank you

Assume Silicon (bandgap 1.12 eV) at room temperature (300 K) with the Fermi level located exactly...

Assume Silicon (bandgap 1.12 eV) at room temperature (300 K) with the Fermi level located exactly in the middle of the bandgap. Answer the following questions. a) What is the probability that a state located at the bottom of the conduction band is filled? b) What is the probability that a state located at the top of the valence band is empty?

N-type silicon is doped with phosphorus, and the ionization potential of phosphorus is 0.044 eV. Find...

N-type silicon is doped with phosphorus, and the ionization potential of phosphorus is 0.044 eV. Find the Fermi level position and concentration at room temperature when the impurity is half ionized.

Explain with suitable diagram how n-type semiconductor can be obtained from intrinsic silicon

Given a MOS capacitor on an n-type semiconductor (relative permittivity =10, ND= 1E13 cm-3)and using an...

Given a MOS capacitor on an n-type semiconductor (relative permittivity =10, ND= 1E13 cm-3)and using an unknown gate dielectric (relative permittivity εr=25). Sketch the C-V plot and label the accumulation, depletion, inversion regions, and the approximate location of the flatband and threshold voltages. Calculate the dielectric thickness and the depletion width in inversion given that the high-frequency capacitance is 250 nF/cm^2 in accumulation and is 50 nF/cm^2 at onset of strong inversion (where minimum capacitance exists). [Ans: dielectric thickness: 88.5...

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