Solar cell A uses a semiconductor with a band gap of 1.1 eV. Solar cell B...

Solar cell A uses a semiconductor with a band gap of 1.1 eV. Solar cell B uses a semiconductor with a band gap of 2.0 eV. Either cell is thick enough to absorb all the light above its band gap energy. Both cells can work together simultaneously with one on top of the other to operate more efficiently in a small space. But which cell has to be on top (first to receive sunlight) for both to work simultaneously and why? Also, in relation to the solar energy spectrum, which cell has the more optimal band gap for photovoltaic applications if only a single cell can be used (say for cost reasons)?

Solutions

Expert Solution

Follow the answer below. Also let me know if I am uploading photos with enough resolution. Sometime it may get blurry.

Manojponduru answered 1 year ago

Next > < Previous

Related Solutions

(10) Band gap of a semiconductor cannot be tailored by ( ) (A) Lattice-matched epitaxy (B) Formation...

(10) Band gap of a semiconductor cannot be tailored by ( ) (A) Lattice-matched epitaxy (B) Formation of quantum well (C) Strained-layer epitaxy (D) Alloying

The fermi function value is non zero within the band gap of a semiconductor. if the...

The fermi function value is non zero within the band gap of a semiconductor. if the fermi level is within the band gap. Do you expect electrons or holes to populate energy states within the band gap? If yes, why? If not, why?

Doping changes the Fermi energy of a semiconductor. Consider silicon, with a gap of 1.11 eV...

Doping changes the Fermi energy of a semiconductor. Consider silicon, with a gap of 1.11 eV between the top of the valence band and the bottom of the conduction band. At 300 K the Fermi level of the pure material is nearly at the midpoint of the gap. Suppose that silicon is doped with donor atoms, each of which has a state 0.13 eV below the bottom of the silicon conduction band, and suppose further that doping raises the Fermi...

In an n-type semiconductor, the Fermi level lies 0.5 eV below the conduction band. If the...

In an n-type semiconductor, the Fermi level lies 0.5 eV below the conduction band. If the conduction of donor atoms is tripled, find the new position of the Fermi level, given KT = 0.03 eV.

A simple insulator has a band gap of 4.0 eV, and the Fermi energy may be...

A simple insulator has a band gap of 4.0 eV, and the Fermi energy may be taken to reside in the middle of the gap. Estimate the probability of an electron at room temperature being in the conduction band.

Why is there a band gap? Could someone explain how a band gap comes to be/why...

Why is there a band gap? Could someone explain how a band gap comes to be/why it occurs?

Solid-state physics, Band gap a, How does the size of the band gap depend on the...

Solid-state physics, Band gap a, How does the size of the band gap depend on the strength of the periodic potential? b, Which type of material would you expect to have the stronger periodic potential, a metal or an insulator? Why? Please explain thoroughly

Please explain why a photodetector or solar cell can be made from either a direct band...

Please explain why a photodetector or solar cell can be made from either a direct band gap or indirect band gap semiconductor. Include equations

describe energy band structure and Fermi distribution function of intrinsic semiconductor, n-type semiconductor and p-type semiconductor.

Big Band Corporation produces a semiconductor chip used on communications.

Big Band Corporation produces a semiconductor chip used on communications. The direct materials are added at the start of the production process while conversion costs are added uniformly throughout the production process. Big Band had no inventory at the start of June. During the month, it incurred direct materials costs of $935,750 and conversion costs of $4,554,000. Big Band started 475,000 chips and completed 425,000 of them in June. Ending inventory was 50% complete as to conversion costs. Compute (a)...

Subjects