10. Consider a step pn junction made of silicon. Carrier lifetimes are given as \tau_n =...

10.

Consider a step pn junction made of silicon. Carrier lifetimes are given as \tau_n = 10^{-7} sτn=10−7s and \tau_p = 10^{-7} sτp=10−7s. Assume long diode, i.e. long quasi-neutral regions. What must be the doping density ratio, N_A/N_DNA/ND, in order to have 95% of the total current in the depletion region carried by electrons?

Answers within 5% error will be considered correct.

11.

Consider two ideal pn junctions at T = 300\: KT=300K with exactly the same physical parameters except for the bandgap energy. The first pn junction has a bandgap energy of 0.525 eV and a forward current of J_1 = 10\: mAJ1=10mA at V_a = 0.255\: VVa=0.255V. For the second pn junction, a forward current of J_2 = 10\: \mu AJ2=10μA was measured at V_a = 0.32\: VVa=0.32V. What is the bandgap energy of the second pn junction material?

Give your answer in unit of eVeV. Answers within 5% error will be considered correct.

Expert Solution

genius_generous answered 2 years ago

A p-n step junction is made in silicon with Na = 1.5x1016 cm-3 and Nd =...

A p-n step junction is made in silicon with Na = 1.5x1016 cm-3 and Nd = 6.5x1016 cm-3. Assume T = 300K. Calculate the following: (a) the built-in potential Vbi (b) the total depletion layer width W and depletion into the n (Wn) and p (Wp) sides at zero bias (c) the maximum electric field at zero bias (d) the maximum electric field at 7V reverse bias (e) Sketch the energy band diagram, charge density distribution, electric field distribution, and...

Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration Nd...

Design an ideal abrupt silicon PN-junction at 300 K such that the donor impurity concentration Nd (in cm^?3 ) in n-side is Nd = 5×10^15 /cm3 and the acceptor impurity concentration Na in the p-side is Na = 817 ×10^15 /cm3 Given: the diode area A = 2×10^?3 cm2 , ni = 10^10/cm3 , ?n = 10^?8 s and ?p = 10^?7 s, Refer to text books, lecture notes, etc for other parameters such Dn, etc., and state clearly in...

1) Given a silicon p-n junction diode. Consider there are ND = 1E16 cm-3 in its...

1) Given a silicon p-n junction diode. Consider there are ND = 1E16 cm-3 in its conduction band while NA = 1E17 cm-3 . (i) At thermal equilibrium, calculate built-in potential (Vbi) using band diagram (no formulae). On the n-side, estimate the electron concentration and flux at q*Vbi above the conduction band. (ii) Now a forward bias VA is applied. On the n-side, estimate the electron concentration and flux at the same energy level at part (i). Hence show that...

A Si pn junction has a circular cross section with a diameter of 10 μm. This...

A Si pn junction has a circular cross section with a diameter of 10 μm. This junction has Na = 1018 cm-3 on one side and Nd = 5 x 1015 cm-3 on the other. Calculate Xn, Xp, Q+ (total charge on n side), and E for this junction at equilibrium (300 K). Sketch E(x) and charge density to scale.

For a silicon one-sided abrupt junction with NA = 2 × 10^19 cm–3 and ND =10^18...

For a silicon one-sided abrupt junction with NA = 2 × 10^19 cm–3 and ND =10^18 cm–3, calculate the junction capacitance at zero bias and a reverse bias of 4 V (T = 300 K). Draw the flat energy band diagram

Q. Consider a silicon p-n junction solar cell of area 4 cm2. If the doping of...

Q. Consider a silicon p-n junction solar cell of area 4 cm2. If the doping of the solar cell are NA = 1.0x1016cm-3 and ND = 1.5x1019 cm-3 and given τn = 10 μs, τp = 0.5 μs, Dn = 9.3 cm2 /s, Dp = 2.5 cm2 /s and IL = 95 mA, (a) calculate and plot the I-V characteristics of the solar cell, (b) calculate the open-circuit voltage and (c) determine the maximum output power of the solar cell,...

1) (MOSCAP question) Consider a n-type silicon wafer. (a) Draw a figure of a MOSCAP made...

1) (MOSCAP question) Consider a n-type silicon wafer. (a) Draw a figure of a MOSCAP made with n-type Silicon. (b) Use drawings to briefly discuss the meaning of the following: (i) Flat band, (ii) Accumulation, (iii) Depletion and (iv) Inversion. (c) Discuss the voltage ranges when (i) through (iv) in part (b) occur. Do not to forget to indicate the polarity of the voltage.

Please solve the below (step by step, show all work): Consider a 10-year note with a...

Please solve the below (step by step, show all work): Consider a 10-year note with a coupon rate of 5%. Calculate its price assuming: 5% yield-to-maturity, annual compounding 5% yield-to-maturity, semi-annual compounding 6% yield-to-maturity, annual compounding 6% yield-to-maturity, semi-annual compounding

Solar cells are given antireflection coatings to maximize their efficiency. Consider a silicon solar cell (n=3.50)...

Solar cells are given antireflection coatings to maximize their efficiency. Consider a silicon solar cell (n=3.50) coated with a layer of silicon dioxide (n=1.45). What is the minimum coating thickness that will minimize the reflection at the wavelength of 700 nm where solar cells are most efficient? answer is 121 nm.

Consider the following data. 15,−4,−10,8,14,−10,−2,−11 Step 1 of 3: Determine the mean of the given data...

Consider the following data. 15,−4,−10,8,14,−10,−2,−11 Step 1 of 3: Determine the mean of the given data Step 2 of 3: Determine the median of the given data. Step 3 of 3: Determine if the data set is unimodal, bimodal, multimodal, or has no mode. Identify the mode(s), if any exist. Separate multiple modes with commas, if necessary.

Question