1) The energy gap of Si at 300 K is 1.11 eV. Assume that n =...

1) The energy gap of Si at 300 K is 1.11 eV. Assume that n = 10^16 /cm^3 . We know that for an undoped/intrinsic Si sample that n_i = 1.5x10^10/cm3 . Thus this is a doped n-type Silicon sample.

1a) Obtain the hole density p at 300 K for this sample.

1b) Obtain E_F – E_i, in eV

1c) Obtain E_C – E_F, in eV

1d) Sketch the bands (don’t worry about the horizontal axis, just the position of the energies E_C, E_F, E_i, and E_V

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genius_generous answered 1 year ago

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