A Si pn diode has an equilibrium diffusion barrier of 0.7 V and an area capacitance...

A Si pn diode has an equilibrium diffusion barrier of 0.7 V and an area capacitance of C2D = 4 nF/cm2 for a reverse bias voltage of -4.3 V. What can you tell about the doping levels?

Solutions

Expert Solution

genius_generous answered 1 year ago

Next > < Previous

Related Solutions

A2) i) What is the cause of the junction capacitance and diffusion capacitance of a pn...

A2) i) What is the cause of the junction capacitance and diffusion capacitance of a pn junction? Under what condition the junction and diffusion capacitance of the pn junction will exist? ii) Is the junction capacitance of a pn junction linear? How about the diffusion capacitance?

Your supervisor asked you to design a diode that has a total junction capacitance at 0V...

Your supervisor asked you to design a diode that has a total junction capacitance at 0V of 1pF. You are asked to start with an n-type GaAs wafer with a doping of 1x1017 cm-3, then create the p-type layer by doping the substrate with accepters. The substrate manufacturer told you that the GaAs substrate has trap centers equal to 2x1014 cm-3 and capture cross-sections for electrons and holes was of 1.0x10-12 cm2. After designing the diode, you are asked to...

A RLC series circuit has a resistance of 104 ohms, inductance 0.7 H,and Capacitance 6.0 µF....

A RLC series circuit has a resistance of 104 ohms, inductance 0.7 H,and Capacitance 6.0 µF. If the amplitude of the voltage supplied by the ac source is 170 V, and the frequency is 60 Hertz, calculate the rms current.

An ideal long-base Si p-n diode has Na = 1017 cm-3, Nd = 7x1016 cm-3 and...

An ideal long-base Si p-n diode has Na = 1017 cm-3, Nd = 7x1016 cm-3 and a cross-sectional area of 10-3 cm2. (i) If τn = τp = 1 µs, calculate the current flowing through the junction under an applied bias of 0.4V. Repeat your calculation for a temperature of 500 K. (ii) Sketch the thermal equilibrium band edge diagram of the p-n junction for both temperatures

A Si npn transistor at T = 300K has an area of 10-3 cm2 , neutral...

A Si npn transistor at T = 300K has an area of 10-3 cm2 , neutral base width of 1µm, and doping concentrations of NE= 1018 cm-3, NB = 1017 cm-3, NC = 1016 cm-3. Other semiconductor parameters are DB= DE =20 cm2/s, τE0= τB0= =10-7s, and τC0=10-6 s. Assuming the transistor is biased in the active region and the recombination factor is unity, calculate current for (a) VBE = 0.5V; (b)IE =1.5 mA, (c) IB = 2µA

A sphere of radius r has surface area A = 4πr2 and volume V = 4...

A sphere of radius r has surface area A = 4πr2 and volume V = 4 3 πr3. The radius of sphere 2 is triple the radius of sphere 1. (a)What is the ratio of the areas, A2/A1? (b) What is the ratio of the volumes, V2/V1?

v The City Commission of Nashville has decided to build a botanical garden and picnic area...

v The City Commission of Nashville has decided to build a botanical garden and picnic area in the heart of the city for the recreation of its citizens. The precedence table for all the activities required to construct this area successfully is as follows: Code Description Time (hrs) Immediate Predecessor(s) A Find location; determine resource requirements 20 None B Requisition of lumber and sand 60 A C Dig and grade 100 A D Saw lumber into appropriate sizes 30...

A box has a bottom with one edge 7 times as long as the other. If the box has no top and the volume is fixed at ?V, what dimensions minimize the surface area?

A box has a bottom with one edge 7 times as long as the other. If the box has no top and the volume is fixed at ?V, what dimensions minimize the surface area? dimensions = ________________Enter the dimensions as a comma-separated list, e.g., 3,sqrt(12),8. (Your answer may involve V.) The top and bottom margins of a poster are 2 cm and the side margins are each 6 cm. If the area of printed material on the poster is fixed at...

Subjects