Questions
discuss with the aid of diagram, how a ground fault interrupter (GFI) and an isolation transformer...

discuss with the aid of diagram, how a ground fault interrupter (GFI) and an isolation transformer operator to protect against electrical hazards.

In: Electrical Engineering

Write the VHDL PROCESS statements for a D flip-flop with synchronous active-LOW clear, synchronous active-LOW preset,...

Write the VHDL PROCESS statements for a D flip-flop with synchronous active-LOW clear, synchronous active-LOW preset, and responsive to a rising edge clock. Use D for the input, Q for the output, PRE for the preset, CLR for the clear, and CLK for the clock. All signals are BIT type

In: Electrical Engineering

Basic Semiconductor Process Lab Fabrication 9. How do you adjust the spin speed and spin time...

Basic Semiconductor Process Lab Fabrication

9. How do you adjust the spin speed and spin time if you found that the PR solution is thick(not flowing freely)?

In: Electrical Engineering

please show examples (NO IMAGES) in your own words for each!! 1) immediate addressing 2) direct...

please show examples (NO IMAGES) in your own words for each!!

1) immediate addressing
2) direct addressing
3)indexed addressing
4)indirect addressing


show similarities and differences
since i always have a hard time which is which.


-will get tumbs up

In: Electrical Engineering

Assume that a data stream with data rate R=36 Mbit/s is to be transmitted on an...

Assume that a data stream with data rate R=36 Mbit/s is to be transmitted on an RF channel.

Assume Nyquist filtering and an allowable bandwidth of 36MHz

(a)Which modulation technique would you choose for this requirement?

(b)What is the value of Tb and TS

this the question and please answer it is it is.

In: Electrical Engineering

Explain why does the peak emission wavelength of LEDs increase (red shift) with temperature? Why does...

Explain why does the peak emission wavelength of LEDs increase (red shift) with temperature? Why does the peak emission intensity decrease with temperature? Use sketches and curves for the answer.

In: Electrical Engineering

A beam of spin‐1/2 particles is prepared in the state:     20 2...

A beam of spin‐1/2 particles is prepared in the state:     20 2 20 4  i a) What are the possible results of a measurement of the spin component Sz and with what probabilities would they occur? b) What are the possible results of a measurement of the spin component SX and with what probabilities would they occur? c) Suppose that the SZ measurement yields the result SZ = ‐ħ/2. Subsequent to that result a second measurement is performed to measure the spin component SX. What are the possible results of that measurement and with what probabilities would they occur? d) Draw a schematic diagram depicting the successive measurements as described in part c. Use the Stern‐Gerlach diagrams as drawn in the book showing the possible numbers of events when measured.

In: Electrical Engineering

1. Define and explain these types of errors that may occur in sensors: Offset, scale, nonlinearity,...

1. Define and explain these types of errors that may occur in sensors: Offset, scale, nonlinearity, hysteresis. Give an example.

In: Electrical Engineering

A T flip-flop is a 1-bit synchronous storage component alternative to the D flip-flop, with a...

A T flip-flop is a 1-bit synchronous storage component alternative to the D flip-flop, with a slightly different interface. The T flip-flop has one input t to synchronously control the state of the flip-flop, as follows:

When t is 0, the flip-flop does not change its state value.

When t is 1, the flip-flop inverts its current state value (0 becomes 1, and 1 becomes 0).

Write a Verilog module for the T flip-flop using a behavioral model. The flip-flop should be triggered by the rising edge of the clock input. It should also have an asynchronous active-low reset input to reset the flip-flop state to zero

In: Electrical Engineering

Illuminate Si PIN Photodiode with a flashlight in reverse, zero and forward bias conditions. State what...

Illuminate Si PIN Photodiode with a flashlight in reverse, zero and forward bias conditions. State what you observed. Compare the amount of change in the current. Which bias condition is best to use Si PIN photodiodes to generate electricity from light (solar cell)?Explain

In: Electrical Engineering

A load draws 3500 W of power at a lagging PF of 0.6 from 500-Vrms, 120...

A load draws 3500 W of power at a lagging PF of 0.6 from 500-Vrms, 120 Hz sinusoidal source. a. (8) Calculate the complex power consumed by the load. b. (10) Calculate the capacitance needed to correct the power factor to 0.8 lagging. c. (7) Draw the power triangles to reflect power system before and after the PF correction. Label all sides and power angles numerically.

In: Electrical Engineering

Exercise 1 Suppose you are given a single-phase inverter using a unipolar PWM switching thod. Given...

Exercise 1

Suppose you are given a single-phase inverter using a unipolar PWM switching thod. Given the DC input as 50 V and the output load is a combination of resistance R = 5Ω and inductance L = 40 mH. You are required to design the necessary parameters in order for the inverter to operate with the following condition.

  1. a fundamental output of 22.5 Vpk at 50 Hz frequency
  2. the current THD of less than 15%

Hint: In this question what are the necessary parameters that need to be determined? (other than the given parameters). Modulation index to be used? Switching frequency to be used?

Assumption that can be made to simplify the design process?

Exercise 2

A single-phase square-wave inverter with a 250 V DC input voltage is operating at a frequency of 50 Hz. The inverter output is connected to the load which is combination of resistance R = 15Ω and inductance L = 33 mH.

  1. study the effect of varying the frequency operation at ±50% from the original frequency of 50Hz to the fundamental output load current. Give your conclusion.
  2. study the effect of varying the frequency operation at ±50% from the original frequency of 50Hz to the load current THD. Give your conclusion.
  3. study the effect of varying the frequency operation at ±50% from the original frequency of 50Hz to the power produced at the load. Give your conclusion.

Exercise 3

The South Korean which is using a 380 kVl-l,rms , 60 Hz 3-phase system is planning to sell electricity to Japan which is using a 210 kVl-l,rms , 50 Hz 3-phase system. As for the implementation, a HVDC transmission line is proposed for the 214 km power transmission line between Fukuoka in Japan to Busan in South Korea. The conductor used for the undersea transmission line has a total resistance of 15Ω and inductance of 15 mH. The Japanese is set to receive 500 MW of clean power daily from the Korean side. As part of the team implementing the project, you are required to design the necessary parameters for the operation of the HVDC system. The following steps will help you in the design process.

  1. set the appropriate transmission line DC voltage at the receive side, determine the required delay angle at the receiver side’s converter
  2. determine the required DC current based on the amount of power received, as well as the voltage drop along the transmission line and the losses
  3. based on (ii.), determine the voltage and the required angle at the sender side’s converter
  4. Analyse the peak-to-peak variation in the DC current based on the first two AC terms

Based on your answer from (i.) to (iv.), in case the team need to improve the losses and ripple current performance to about 50% from its current condition, suggest which design parameters to be changed. Verify your answer through calculation.

Thankyou :)

In: Electrical Engineering

1. Use Boolean algebra to simplify the following Boolean expressions to expressions containing a minimum number...

1. Use Boolean algebra to simplify the following Boolean expressions to expressions containing a minimum number of literals:

(a) A’C’ + A’BC + B’C

(b) (A + B + C)’(ABC)’

(c) ABC’ + AC

(d) A’B’D + A’C’D + BD

(e) (A’ + B)’(A’ + C’)’(AB’C)’
(f) (AE + A’B’)(C’D’ + CD) + (AC)’

2. Obtain the truth table of the function F = (AB + C)(B + AC), express the function F in sum-of-minterms and product-of-maxterms forms, and express the function F’ in sum-of-minterms and product-of-maxterms forms.

3. Use Boolean algebra to convert the following expressions into sum-of-products and product-of-sums forms:

(a) (AB + C)(B + C’D)’
(b) X’ + X(X + Y’)(Y + Z’)’
(c) (A + BC’ + CD)(B’ + EF)’

In: Electrical Engineering

I need to model a series RLC circuit with a AC voltage source using simulink which...

I need to model a series RLC circuit with a AC voltage source using simulink which measures current and voltage across each component. Please include the formulas your model is based off of. thanks.

R = 1ohm
L = 1 millhenery
C = 1 microfarad

In: Electrical Engineering

I am really sorry but these are related to each other, please and please show me...

I am really sorry but these are related to each other, please and please show me all the steps with clear hand writing. thanks in advance

_____________

(a) Calculate the electrical conductivity of copper if it is given that the metal has 8.5 x 1022 conduction electrons per cm3 and the mobility of a conduction electron is 35 cm2.V-1.s-1.

answer , units

(b) In an electronics project you need to construct your own inductor. The instructions for making this inductor is to “wind it from a 1.2 meter length of # 20 AWG (American wire gauge) copper wire.

(i) How thick is this wire in mm ?

(ii) What will be the resistance of your inductor ?

answer , units

____________

Q3) (i) Calculate the electrical conductivity of a piece of pure Si if it is given the number of intrinsic carriers at 300 K is 1 x 1010 cm-3 and that the electron and hole mobilities are  μe = 1350 cm2.V-1.s-1  and μh = 450 cm2.V-1.s-1respectively.

answer, units     

(ii) Compare the conductivities between Si and Cu at 300 K as calculated from Q2 and Q3(i).         

____________

Q4) Following on from Q3, the temperature now increases to 350 K. Describe semi-quantitatively how and why the carrier concentration and the conductivity will change due to this temperature change for both these two materials (Si and Cu).

In: Electrical Engineering