What is KVL? Give an example of the application of KVL. In your example, please include details of your circuit and all the KVL equations.
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What is the Elmore delay of an n-input NAND gate? Please explain in detail and either type answer or write with organized and clear handwriting.
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A) Given a vector electric field:
E i = x̅100e−γ z
V/m
Find the associated magnetic field.
B) If this field is normally incident on a uniform lossy medium
with Er = 3.0, tan δ = 0.1, and μ = μ0 initially
propagating in air, find bot h the reflection and transmission
coefficients.
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In the design of communication links we must always keep track of the power needed to represent the signals, the effects of the noise and the bandwidth needed. In a post answer the following :
the answer two to three paragraphs
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what part of the power system is TCSC being implemented?
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I would like clarification on the movement of current. I have heard that current travels "path of least resistance", but I have never fully grasped the concept. I understand that current travels from higher potential to lower potential so does that mean that the higher the potential, the greater the resistance and therefore current travels path of least resistance?
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A discrete system is described by the difference equation y(n)= 2.5y(n-1)-y(n-2)+3x(n)+3x(n-2)
a. Using Z-transform, Determine all possible impulse responses h(n) and indicate the casuality and stability properties.
b.For the casual filter, determine the output y(n) if the input is x(n)=g(n)-2g(n-1) where g(n)=cos (pin/s)u(n).
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Explain the main purpose of an interrupt signal. Give an example of how the interrupt is used.
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Word Problem : Explain what is Z transform, and describe the relation of the Z transform and the DTFT.
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1. Design 3rd order ideal low pass filter H(s).
Two poles are complex conjugates, and one pole is on the real axis.
2. transform H(s) to H(z). (Use impulse invariance criterion)
1%criterion
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The total current density in a semiconductor is given as constant and Jtop = -20 A / cm ^ 2. Total current density is the sum of the hole drift current density and the electron diffusion current densities. The hole density in the crystal is constant and p = 0.64 * 10 ^ 10 cm ^ -3. Electron density (to be written in x distance micrometer) is given as n (x) = 2 * 10 ^ 15 * e ^ (- X / L) cm ^ -3 and L = 20 micrometer. Since the diffusion coefficient of electrons is Dn = 26 cm ^ 2 / s and the mobility of the holes is n = p = 440 cm ^ 2 / Vs:
a) Find the variation of the electron diffusion current density
depending on the location and draw approximately by stating the
important values,
b) Find the variation of the electric field applied to the
semiconductor depending on the location and draw the approximate
values by drawing them approximately,
c) Find the variation of the hole drift current density depending
on the location and draw approximately by specifying the important
values.
I need quick answer please.Thank you
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Design a 5-bit binary counter using JK flip flops. Draw the flip-flop circuit diagram, the state graph, the timing diagram, the truth table (with clk pulse) and the state table (with present and next states).
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