Question
In: Electrical Engineering
The total current density in a semiconductor is given as constant and Jtop = -20 A...
The total current density in a semiconductor is given as constant and Jtop = -20 A / cm ^ 2. Total current density is the sum of the hole drift current density and the electron diffusion current densities. The hole density in the crystal is constant and p = 0.64 * 10 ^ 10 cm ^ -3. Electron density (to be written in x distance micrometer) is given as n (x) = 2 * 10 ^ 15 * e ^ (- X / L) cm ^ -3 and L = 20 micrometer. Since the diffusion coefficient of electrons is Dn = 26 cm ^ 2 / s and the mobility of the holes is n = p = 440 cm ^ 2 / Vs:
a) Find the variation of the electron diffusion current density
depending on the location and draw approximately by stating the
important values,
b) Find the variation of the electric field applied to the
semiconductor depending on the location and draw the approximate
values by drawing them approximately,
c) Find the variation of the hole drift current density depending
on the location and draw approximately by specifying the important
values.
I need quick answer please.Thank you
Solutions
Manojponduru answered 1 year agoRelated Solutions
The total current density in a semiconductor is given as constant and Jtop = -20 A...
The total current density in a semiconductor is given as
constant and Jtop = -20 A / cm ^ 2. Total current density is the
sum of the hole drift current density and the electron diffusion
current densities. The hole density in the crystal is constant and
p = 0.64 * 10 ^ 10 cm ^ -3. Electron density (to be written in x
distance micrometer) is given as n (x) = 2 * 10 ^ 15 * e ^...
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