In: Electrical Engineering
Define or describe the following terms as applied within an electronics environment and relative to our class.
A - High Pass Filter
B - Low Pass Filter
C - Zener Diode (What is a unique feature of a zener diode?)
D - N Channel JFET (draw the symbol, label and descrive the leads)
E - Very Large Scale Integration
F - Electrostatic Discharge
G - Light emitting diode (how does an LED produce light?)
H - Photovoltaic cell (describe how a solar cell functions)
I - List the characteristics of the Common Base Circuit, Common Emitter circuit, and the Common Collector circuit
J - Forward Baised
K - Reverse Biased
A) High Pass Filter:
A high pass filter allows high frequencies to go through and cuts,
or attenuates low frequencies.
B) Low Pass Filter:
A low-pass filter (LPF) is a filter that passes signals with a
frequency lower than a certain cutoff frequency and attenuates
signals with frequencies higher than the cutoff frequency.
C) zener diode:
A zener diode is a special type of device designed to operate in
the zener breakdown region. Zener diodes acts like normal p-n
junction diodes under forward biased condition. When forward biased
voltage is applied to the zener diode it allows large amount of
electric current and blocks only a small amount of electric
current.
Zener diode is heavily doped than the normal p-n junction diode. Hence, it has very thin depletion region. Therefore, zener diodes allow more electric current than the normal p-n junction diodes.
D) N channel JFET:
E) very large scale integration:
Very large-scale integration (VLSI) is the process of
integrating or embedding hundreds of thousands of transistors on a
single silicon semiconductor microchip. VLSI technology was
conceived in the late 1970s when advanced level computer processor
microchips were under development.
F) Electrostatic discharge:
Electrostatic discharge (ESD) is a swift discharge of electric current between two objects with different charges and different numbers of electrons. This exchange of electrons creates a large electromagnetic field buildup, resulting in ESD.
Certain electronic devices are vulnerable to low-voltage ESD. For example, a hard drive is susceptible to just 10 volts. Integrated circuits (IC) are also prone to ESD and may be permanently damaged by high-voltage currents.
G)LED:
The light emitting diode simply, we know as a diode. When the diode
is forward biased, then the electrons & holes are moving fast
across the junction and they are combining constantly, removing one
another out. Soon after the electrons are moving from the n-type to
the p-type silicon, it combines with the holes, then it disappears.
Hence it makes the complete atom & more stable and it gives the
little burst of energy in the form of a tiny packet or photon of
light.
H) photo voltaic cell:
Conversion of light energy in electrical energy is based on a
phenomenon called photovoltaic effect. When semiconductor materials
are exposed to light, the some of the photons of light ray are
absorbed by the semiconductor crystal which causes a significant
number of free electrons in the crystal. This is the basic reason
for producing electricity due to photovoltaic effect. Photovoltaic
cell is the basic unit of the system where the photovoltaic effect
is utilised to produce electricity from light energy. Silicon is
the most widely used semiconductor material for constructing the
photovoltaic cell. The silicon atom has four valence electrons. In
a solid crystal, each silicon atom shares each of its four valence
electrons with another nearest silicon atom hence creating covalent
bonds between them. In this way, silicon crystal gets a tetrahedral
lattice structure. While light ray strikes on any materials some
portion of the light is reflected, some portion is transmitted
through the materials and rest is absorbed by the materials.
The same thing happens when light falls on a silicon crystal. If
the intensity of incident light is high enough, sufficient numbers
of photons are absorbed by the crystal and these photons, in turn,
excite some of the electrons of covalent bonds. These excited
electrons then get sufficient energy to migrate from valence band
to conduction band. As the energy level of these electrons is in
the conduction band, they leave from the covalent bond leaving a
hole in the bond behind each removed electron. These are called
free electrons move randomly inside the crystal structure of the
silicon. These free electrons and holes have a vital role in
creating electricity in photovoltaic cell. These electrons and
holes are hence called light-generated electrons and holes
respectively. These light generated electrons and holes cannot
produce electricity in the silicon crystal alone. There should be
some additional mechanism to do that.
J) Forward bias:
When we connect p-type region of a junction with the positive
terminal of a voltage source and n-type region with the negative
terminal of the voltage source, then the junction is said to be
forward biased
Reverse Bias:
When positive terminal of a voltage source is connected to the
n-type region and the negative terminal of the source is connected
to the p-type region then the pn junction is said to be in reverse
biased condition.