A sample of silicon is doped with donors to a concentration of 10^20 donors m−3 ....

A sample of silicon is doped with donors to a concentration of 10^20 donors m−3 . Assume all the donors are ionised and that the sample is initially at 300K. (a) What is the concentration of holes in this sample of silicon? (b) Calculate the position of the Fermi level in this doped sample of silicon. (c) At what temperature will the intrinsic electron concentration become larger than the donor electron concentration?

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genius_generous answered 2 years ago

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