In: Electrical Engineering
A semiconductor has an intrinsic charge carrier density of 1×1014cm3 ,a charge carrier lifetime of 10us, an electron diffusion coefficient of 36 cm2/s, and a hole diffusion coefficient of 12cm2/s. It is at a temperature of 450K and is illuminated by a laser beam at an optical generation rate of 1019 electron‐hole‐pairs/(cm3∙s) What is the separation between the electron and hole quasi‐Fermi levels? Show these quasi‐Fermi levels on a rough sketch of the energy band diagram with the intrinsic, conduction band, and valence band energy levels. What is the change in the semiconductor's conductivity due to the illumination?