A semiconductor has an intrinsic charge carrier density of
1×1014cm3 ,a charge carrier lifetime of 10us, an
electron diffusion coefficient of 36 cm2/s, and a hole
diffusion coefficient of 12cm2/s. It is at a temperature
of 450K and is illuminated by a laser beam at an optical generation
rate of 1019 electron‐hole‐pairs/(cm3∙s) What
is the separation between the electron and hole quasi‐Fermi levels?
Show these quasi‐Fermi levels on a rough sketch of the energy band
diagram with the intrinsic, conduction...