Sketch and label a clamping circuit. Use a 2.5 V rms source and
an ideal diode. Explain how it works. Show the voltage wave forms
in a diagram, giving numeric values where appropriate.
How does temperature affect the band structure and the I-V
characteristics of semiconductor devices?
How does changing the carrier lifetime affect semiconductor
devices?
For a GaAs PN junction, imagine that the device is to be used as
a photo-diode. What width of intrinsic layer would you want to
design the device with if the photons only absorb in the
depletion/intrinsic regions? Assume: wavelength = 0.75um.
A room with 2.7-m-high ceilings has a metal plate on the floor
with V = 0V and a separate metal plate on the ceiling. A
1.5 g glass ball charged to 5.0 nC is shot straight up at 4.7 m/s
.
How high does the ball go if the ceiling voltage is
2.9×106 V ?
How high does the ball go if the ceiling voltage is
−2.9×106 V ?
1a.
What does doping do to silicon?
1b. When no current is applied to a diode, what forms at the
junction between the N-type and P-type layers?
1c. What is the biggest problem to account for while
manufacuring silicon chips?
Brieflydiscuss:
(i) The operational principals and the main characteristics of
photomultiplier tubes
(PM). Why does a PM tube still have an output signal even in
absolutely dark
conditions? What is affecting timing of the signal in a PM
tube?
(ii) The response functions of 'small', 'middle' and 'large'
gamma-ray spectrometers.
(iv) Spectroscopy setup and output signals from each part of
setup.