Sketch and label a clamping circuit. Use a 2.5 V rms source and
an ideal diode. Explain how it works. Show the voltage wave forms
in a diagram, giving numeric values where appropriate.
How does temperature affect the band structure and the I-V
characteristics of semiconductor devices?
How does changing the carrier lifetime affect semiconductor
devices?
For a GaAs PN junction, imagine that the device is to be used as
a photo-diode. What width of intrinsic layer would you want to
design the device with if the photons only absorb in the
depletion/intrinsic regions? Assume: wavelength = 0.75um.
Brieflydiscuss:
(i) The operational principals and the main characteristics of
photomultiplier tubes
(PM). Why does a PM tube still have an output signal even in
absolutely dark
conditions? What is affecting timing of the signal in a PM
tube?
(ii) The response functions of 'small', 'middle' and 'large'
gamma-ray spectrometers.
(iv) Spectroscopy setup and output signals from each part of
setup.
Briefly discuss: (i) The operational principals and the main
characteristics of photomultiplier tubes (PM). Why does a PM tube
still have an output signal even in absolutely dark conditions?
What is affecting timing of the signal in a PM tube? (ii) The
response functions of 'small', 'middle' and 'large' gamma-ray
spectrometers. (iii)The nature of escape peaks in gamma
spectroscopy and how its efficiency depends on detector material
and energy of gamma photons and size of the detector. (iv)
Spectroscopy setup...