Explain how P and N doping can be used to create a device that will...

Explain how P and N doping can be used to create a device that will only allow a flow of current in one direction. Include in your answer a description the movement of charge carriers when a forward or reverse bias are applied across the device.

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Manojponduru answered 2 years ago

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Briefly explain how intrinsic germanium can be turned into an n-type germanium and a p-type germanium...

Briefly explain how intrinsic germanium can be turned into an n-type germanium and a p-type germanium by doping of selected impurity atoms. Sketch separate 2D diagrams to help illustrate the bonding/structures of extrinsic Ge in the locality of the impurity atoms. If an extrinsic germanium crystal has a hole concentration of 2.0x108 cm-3 at 300 K. Calculate the electron concentration, n. Is the extrinsic Ge semiconductor an n-type or p-type semiconductor? Give your reason. (Given the intrinsic electron concentration, ni...

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Explain how P and N doping can be used to create a device that will...

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