A solar cell
fabricated with a p-n junction has an open circuit voltage of 0.6V
and a short circuit current of 20mA/cm2when exposed to a
solar insolation of 1000 W/m2, and has a form factor
FF=0.7
Draw the current-voltage characteristic of this device, making
sure to identify the Voc and Isc, and the point where the maximum
power is generated.
What is the efficiency of this cell?
Suppose you can improve the manufacturing process of the cell
so that the...
Q.
Consider a silicon p-n junction solar cell of area 4
cm2. If the doping of the solar cell are NA =
1.0x1016cm-3 and ND = 1.5x1019 cm-3 and given
τn = 10 μs, τp = 0.5 μs, Dn = 9.3 cm2 /s, Dp = 2.5 cm2 /s and IL =
95 mA, (a) calculate and plot the I-V characteristics of the solar
cell, (b) calculate the open-circuit voltage and (c) determine the
maximum output power of the solar cell,...
condidering a forward bias n-p junction and reverse
bias n-p junction, which one produces a rectifying action? explain
how it produces the rectifying action
Explain, using your own words, how a solar cell works. Please
include the description of all relevant physical processes, such as
charge carrier generation, recombination, and collection. Include a
descriptionof carrier concentration upon illumination.
Length should be 1 page ,12 font, single spaced.
Explain, using your own words, how a solar cell works. Please
include the description of all relevant physical processes, such as
charge carrier generation, recombination, and collection. Include a
descriptionof carrier concentration upon illumination.
Length should be 1 page ,12 font, single spaced.
Describe the working principle of a Silicon Solar Cell.
a) How the solar cell generates electricity? Describe n/p
doping, depletion region concepts.
b) Describe the meaning of Fill Factor. How do you calculate the
fill factor? What can be the reasons of bad fill factor
behavior?
c) A solar panel has an area of 0.5 m2 and illuminated with an
irradiation of 1000W/m2 . Its open circuit voltage is 24 V and
Short Circuit Current is 5.5 A. If the...
Consider a Si p-n junction connected p-type and n-type
semiconductors each doped 1017 /cm3
concentration, in temperature 50K, 350K, 650K
Suppose occur energy state of conduction band quantization due
to the junction make very small.
If Si p-n junction has only three DOS(density of state) in
conduction band and valence band, Discuss band diagrams and I-V
curve.