In: Electrical Engineering
Use a 2N7002 MOSFET, connect the source to ground and add separate DC voltage sources to the gate and drain. Set the voltages to 2.5 V (gate) and 5 V (drain). Save an image of your circuit and include it in your document. Perform a dc operating point (DC op pnt) simulation and paste the output (as text) in your document. Confirm that the operating point is at approximately VGS = 2.5 V and ID = 62 mA. [3 marks]
b) Use your circuit and the “DC sweep” simulation option to generate the drain current characteristics for this MOSFET. You should setup the drain voltage as the first source to sweep (from 0 V to 10 V at 1 mV intervals) and the gate voltage as the second (from 1 V to 3 V at 0.25 V intervals). Run the simulation and include a plot of the drain current in your document (your plot should, of course, consist of multiple curves). NOTE USING LTspice
circuit diagram
operating point of the MOSFET as text document. It can be seen that current is approximately 62mA with Vgs =2.5V
Drain voltage as source 1 and ,voltage ranging from 0 to 10V at steps of 1mV
gate voltage as source 2 with voltage varying from 0 to 3V in steps of 0.25V
ID characteristics of MOSFET for mutiple Vgs