In: Electrical Engineering
Consider a silicon crystal whose band gap energy is Eg=1.124eVE_g = 1.124 eVEg=1.124eV and is kept at T=300KT = 300 KT=300K.
If the Fermi level, EFE_FEF, is located at precisely the middle of the band gap, what is the probability of finding an electron (or equivalently the probability of a state being occupied) at E=EC+kBTE = E_C + k_BTE=EC+kBT?