Question

A) What are the difference in properties between the silicon substrate and the oxide layer?

B) Design a process that produces the oxide layer on a silicon wafer.

C) Design a process that forms the oxide layer only in certain desired areas.

Answer 1

Answer:

A) What are the difference in properties between the silicon substrate and the oxide layer?

Silicon "Si" ultra - pure is crystalline property, the impurity level is of fractions of parts per million, hardly leads in a clear way, is used as substrate and to modify its conductivity is "contaminated" with elements having deficient electrons excess boron or phosphorus electrons, creating the type material "p", or "n", which give different characteristic conductive silicon. to isolate these materials within the same silicon wafer of silicon dioxide applied to heat the silicon oxygen, silicon dioxide is an electrical insulator is used (of 10e¹⁴ to 10e¹⁶ ohm-cm at 25 °C)

B) Design a process that produces the oxide layer on a silicon wafer.

C) Design a process that forms the oxide layer only in certain desired areas.