Question

Explain to me how a metal oxide semiconductors field effect transistor works, and how it is applicable to the wind industry. give detailed examples for full credit

Answer 1

metal oxide semiconductors field effect transistor works, and how it is applicable to the wind industry.

2)If VGS=0 Channel doesnot frame and current stay zero

3)IF VGS is sure and littler gaps get repulse from P substrate and consumption layer will show up beneath Silicon dioxide ( SiO2)

4)If VGS Is increment more remote than the positive charge of ( SiO2) wind up sufficiently solid and its begin drawing in minority electron of p substrate of majortity

Electron of N Source space

5) their electron gathered underneath SiO2 and shape a reversal layer which can go about as a N-type channel

On the off chance that VGS=VT then electron thickness in channel ends up equivalent to gap thickness in substrate then a counderable empty current begin streaming out of deplete to source through channel

On the off chance that VGS Is expanded further then electron thickness in channel and channel conductivity will continue expanding or enchancing at that point ,deplete current is additionally increments

(VGS-VT) is called overdrive voltage

IDS =VDS/RDS

On the off chance that VDS=0

At that point IDS=0

For little estimations of VDS Channel opposition RDS Remain steady and deplete current

increment straightly with VDS

In the event that VDS Is expanded further then RDS Also increments because of tappering of channel and thus deplete current increments at moderate rate

with increment in VDS ,the voltage crosswise over mos capacitance diminishes along the edge of deplete

because of this reversal charge diminishes at deplete side and accordingly channel profundity likewise reductions and channel moves toward becoming tappered

in the event that VDS=VGS-VT Channel profundity ends up zero or direct gets squeezed off at deplete end

In the event that VDS>VGS-VT at that point direct squeezed off happens at a separation
l far from deplete and the abundance voltage zero

VDS-(VGS-VT) will show up accross ,MOSFET ∆l separate because of this exceptionally solid electric field VDS-(VGS-VT)/∆L(>1O^4V/cm) will created on ∆L remove it causes satuaration of electron speed and subsequently deplete current ends up consistent

draincharacteristics:

deplete qualities are determined into two districts

triode locale or direct region(VDS<(VGS-VT) MOSFET go about as resister

satuaration locale or pinchoff areas (VDS>(VGS-VT)MOSFET ends up consistent current source w.r.t VDS and voltage subordinate current source w.r.t VGS