Sketch the equilibrium band structure of pnp bipolar junction
transistor (BJT). In point form, explain how
the application of a bias voltage at the “base” changes the band
structure that you have drawn and can be
used to turn this device “on” and “off”. (a well-labeled
equilibrium diagram will enable you to complete this without
any further band-structure diagrams)
ketch labelled diagrams of a field effect
transistor and an NPN transistor and describe how the bias of each
can be controlled for applications such as switches and
amplifiers.
Consider a Si NPN BJT. Discuss how an change in one of
the design parameters affect the emitter injection efficiency, the
base transport factor, the common emmiter current gain, and the
early voltage. Assume complete ionization. Further assume the
carrier mobility and the minority carrier lifetime are independent
of the change in design parameters.
(a) Increase emitter doping
(b) Increase base doping
(c) Increase base width
(d) Increase collector doping
Consider a BJT transistor acting as a switch. How to determine
the design resistances if we want to transition between cut off and
saturation region to active region?
1. Explain the time constant and its formula derivatives!
for R-L circuit
for R-C circuit
for R-L-C circuit
give step by step how to get he formula,( not only the
formula.)
2. Draw and explain the simple triangle wave generator
circuit!
3. Find out and explain how the LPF and HPF circuits work with
capacitors!
4. explain how the capacitors and inductors work as clearly as
possible and give an example of the application
Explain to me how a metal oxide semiconductors field effect
transistor works, and how it is applicable to the wind industry.
give detailed examples for full credit