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One integrated circuit design calls for the diffusion of arsenic into silicon wafers; the background concentration...

One integrated circuit design calls for the diffusion of arsenic into silicon wafers; the background concentration of As in Si is 2.5 × 1020 atoms/m3. The predeposition heat treatment is to be conducted at 1000°C for 45 minutes, with a constant surface concentration of 8 × 1026 As atoms/m3. At a drive-in temperature of 1100°C, determine the diffusion time required for a junction depth of 1.2 μm. For this system, values of Qd and D0 are 4.10 eV and 2.29 × 10−3 m2/s, respectively. (The answer is NOT 49.12hours)

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samet mamat answered 2 years ago
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