Question

How does Shallow Trench Isolation cause compression in the island structure silicon?

Answer 1

A semiconductor structure, comprising:

a shallow trench isolation (STI) in the substrate;

a first island of mixed material and a second island of mixed material in the substrate, wherein the first island and the second island have a different crystal lattice with different dimensions between atoms; and

a first Si layer on the first island and a second Si layer on the second island,

wherein the STI is high temperature stable amorphous material.

A semiconductor structure and method of manufacturing is provided. The method of manufacturing includes forming shallow trench isolation (STI) in a substrate and providing a first material and a second material on the substrate. The first material and the second material are mixed into the substrate by a thermal anneal process to form a first island and second island at an nFET region and a pFET region, respectively. A layer of different material is formed on the first island and the second island. The STI relaxes and facilitates the relaxation of the first island and the second island. The first material may be deposited or grown Ge material and the second material may be deposited or grown Si: C or C. A strained Si layer is formed on at least one of the first island and the second island.