Question

An article in Solid State Technology, "Orthogonal design for process optimization and its application to plasma etching" by G.Z.Yin and D.W.
Jillie (May, 1987) describes an experiment to determine the effect of the
C2F6 flow rate on the uniformity of the etch on a silicon wafer used in
integrated circuit manufacturing. All of the runs were made in random order. Data for two flow rates are as follows:

C2F6     Uniformity Observation
Flow 1      2      3      4     5      6

125   2.7   4.6 2.6   3.0   3.2   3.8

200   4.6   3.4   2.9   3.5   4.1   5.1

a) Does C2F6 flow rate affect average etch uniformity? use a=0.05

b) What is the P-value for the test in part (a)

c)Does the C2F6 affect the wafer-to-wafer variability in each uniformity? use a0.05

d) Draw box plots to assist in the interpretation of the data from this experiment

Answer 1