5.29) Explain what the following fragment of code achieves. Note that the data is signed and that the packed shift right arithmetic instruction operates on word (16-bit) operands.

MOVQ MM0, MM1

PSRAW MM0, 15

PXOR MM0, MM1

5.30) Consider the following block of operations that might be found inside a loop. Explainf what the instructions do and what operation is being performed on the data.

MOVQ MM1, A ; move 8 pixels of image A

MOVQ MM2, B ; move 8 pixels of image B

MOVQ MM3, MM1

PSUBSB MM1, MM2

PSUBSB MM2, MM3

POR MM1, MM2

List and compare ways of evaluating wireless communication networks/systems.

PLEASE TYPE ANSWER! HANDWRITTEN SOLUTIONS ARE TOO DIFFICULT TO UNDERSTAND THE EXPLANATIONS! Please TYPE 100 words addressing the following:

Associated with Nyquist rate is the concept of aliasing. What is the significance of aliasing in the context of digital communication and what corrective measures can be used to overcome aliasing?

Please TYPE 100 or more words discussing the following:

What are some of the common applications of a multiplexer?

List and discuss at least two applications for multiplexers.

Consider the casual CT systems with transfer functions:

H1(s)= (s+1)/(s+2)(s^2+s+16)

H2(s)= s/(s+10)(s+1)

H3(s)= 1/(s-1)(s+1)

H4(s)= s/(s+1)(s^2+s+16)

1) Write magnitude and phase expression for their Bode Plots and Sketch their asymptotes. Verify Using Matlab.

2) Compute their steady-state response to cos(5t) u(t) + 3u(t) + cos(10t) e^-t u(t).

***Please show slope computations and conversions for the graphs. This is where I am unable to move forward.

what are the different ways you can represent the exact same design using:

A.  VHDL

B.  state diagrams

C. sequences

Describe an important Canadian engineering or computer science accomplishment of the past 100 years. In 3-5 paragraphs, discuss the context of the accomplishment (i.e., who achieved it, when it occurred, and what motivated it) as well as its significance (i.e., why it was important and what positive long-term effects resulted from this accomplishment). Include a list of references. Each reference should be cited in the text properly.

n the figure ε1 = 2.72 V, ε2 = 0.766 V, R1 = 6.82 Ω, R2 = 1.61 Ω, R3 = 5.68 Ω, and both batteries are ideal. What is the rate at which energy is dissipated in (a) R1, (b) R2, and (c) R3? What is the power of (d) battery 1 and (e) battery 2?   

Objectives:

Design an electronic circuit to measure Celsius temperature.

Model the circuit with Multisim and validate its operating characteristics.

Design Requirements:

A need has arisen for an inexpensive electronic thermometer that will measure Celsius temperature over a specified range. The basis for the design is the property that the forward voltage of a diode decreases with increasing temperature and can be approximated by a straight-line linear equation. The feasibility as a transducer will be studied and the specifications are as follows:

                Input Temperature Range: 0^o C to 100^o C

                Realistic Circuit Output Voltage: 0 V to 10 V based on a calibration factor of 0.1 V/^o C

                Voltage Representing Temperature: 0 V to 100 V monitored by VCVS with a gain of 10

                Accuracy of ±0.5 ^oC at the two extreme input temperatures as measured at output of VCVS

                One 1N4148 diode to serve as the basis for the transducer

                No more than three 741 operational amplifiers (preferably two) and ± 15 V power supplies

                Resistor values as needed (Assume calibration to an accuracy of 3 significant digits.)

                One ideal voltage-controlled voltage source (VCVS) with a gain of 10 to monitor the output

Pg. 1       This page with data added as requested should be Page 1 of the report.

Pg. 2       The instructor will specify a bias current. Connect a DC Current Source across the diode.                Perform a Temperature Sweep from 0^o C to 100^o C and create a Multisim plot of diode voltage                 versus Celsius temperature for Page 2. Use the vertical intercept and the slope (dy/dx) to      determine the straight-line equation that describes the diode voltage as a function of the          temperature. Then solve for the temperature in terms of the diode voltage. List the results below.                                   

                Bias Current:      I.     II.     III.     IV.      V.                         

                Diode Voltage as a Function of Temperature:                                                          

                Temperature as a Function of Diode Voltage:

Pg. 3       Design a circuit to provide an output voltage in terms of input temperature. Add a Voltage Gain Block with a gain of 10 so that the ideal value of the output voltage is the input temperature. Show the Multisim schematic diagram of the circuit on Page 3.

Pg. 4      Use Temperature Sweep to obtain a Multisim plot of the output voltage versus input Celsius          temperature. Use cursors to measure the output at the two extreme input values.

Create a 6th order Butterworth filter. Then change capacitor values and notice how the design specifications change. Create a plot where there is an ideal high performance filter (exact capacitor values) compared to a filter where low tolerance capacitors are used (the value of the capacitor drifts).

1) Within a cubic unit cell on which you have labeled the x, y and z-axes:

a) Sketch the (110) plane.

b) Sketch a direction from the <100> family that is also on the (110) plane. Label its direction indices.

c) Sketch a direction from the <110> family that is also on the (110) plane. Label its direction indices.

d) Sketch a direction from the <111> family that is also on the (110) plane. Label its direction indices.

2) Make scale drawings of each of the following segments of directions in silicon (lattice constant is 0.543 nm), using circles to represent each of the atoms whose centers are on the segment. The radii of the circles should also be drawn to scale, so that any nearest neighbor atoms touch (if there are any nearest neighbors in that drawing). Place an atom at each end of each segment. Clearly label the separation distance between the centers of each atom on the line segment.

a) A segment 1.086 nm long in the [100] direction.

b) A segment 1.536 nm long in the [110] direction.

c) A segment 1.881 nm long in the [111] direction.

Explain the differences between TE, TM, and TEM waveguide modes and the difference between guided and unguided EM propagation