A diffusion process is run at 1200 ºC with the surface concentration of diffusing atoms kept...

A diffusion process is run at 1200 ºC with the surface concentration of diffusing atoms kept constant at 1024 atoms/m3 . The process is run for 3 h. If there are no diffusing atoms at the start of the diffusion process inside the diffusing material, at what depth below the surface is the concentration of atoms 1022 atoms/m3 ? The diffusion coefficient at 1200ºC is 7.0 X 10-17 m2 /s.

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Amanda K answered 5 months ago

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An n-type silicon wafer undergoes a pre-deposition diffusion process with a constant surface concentration of boride...

An n-type silicon wafer undergoes a pre-deposition diffusion process with a constant surface concentration of boride gas; the resulting concentration of boron in silicon at the surface is estimated to be 1x1018 atoms cm-3. The background concentration of trace boron atoms in the silicon wafer is estimated to be 1x1014 cm-3. (A) Estimate the depth of the p-n junction below the surface when the background doping concentration of the n-type impurity is 3.45 x1016 cm-3; assume the diffusion process proceeds...

An n-type silicon wafer undergoes a pre-deposition diffusion process with a constant surface concentration of boride...

An n-type silicon wafer undergoes a pre-deposition diffusion process with a constant surface concentration of boride gas; the resulting concentration of boron in silicon at the surface is estimated to be 1x1018 atoms cm-3. The background concentration of trace boron atoms in the silicon wafer is estimated to be 1x1014 cm-3. (A) Estimate the depth of the p-n junction below the surface when the background doping concentration of the n-type impurity is 3.45 x1016 cm-3; assume the diffusion process proceeds...

Q1.An n-type silicon wafer undergoes a pre-deposition diffusion process with a constant surface concentration of boride...

Q1.An n-type silicon wafer undergoes a pre-deposition diffusion process with a constant surface concentration of boride gas; the resulting concentration of boron in silicon at the surface is estimated to be 1x10^18 atoms cm-3 . The background concentration of trace boron atoms in the silicon wafer is estimated to be 1x10^14 cm-3 .(A) Estimate the depth of the p-n junction below the surface when the background doping concentration of the n-type impurity is 3.45 x10^16 cm-3 ; assume the diffusion...

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A diffusion process is run at 1200 ºC with the surface concentration of diffusing atoms kept...

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An n-type silicon wafer undergoes a pre-deposition diffusion process with a constant surface concentration of boride...

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