The first step in the production of high purity silicon for semiconductors is represented by this...

The first step in the production of high purity silicon for semiconductors is represented by this equation. SiO2(s) + 2C(s) → Si(s) + 2CO(g) H° = +689.9 kJ

a. Calculate Hf° for SiO2(s). Given: Hf° for CO(g) = –110.5 kJ·mol–1

b. Find Srxn for the production of pure silicon. Given: S° for C(s) = 5.7 J·K–1 ·mol–1 , for CO(g) is 197.6 J·K–1 ·mol–1 , for Si(s) = 18.8 J·K–1 ·mol–1 , and for SiO2(s) = 41.8 J·K–1 ·mol–1

c. Determine G° for the reaction at 25 °C.

d. Find the minimum temperature in °C at which this reaction is spontaneous. Assume that H° and S° do not vary with temperature.

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