Question

Nanotechnology:
Explain how the minimum thickness of the resist layer can change when taking into account doping concentrations in the ion-implanted layers.

Answer 1

Ion implantation is a low-temperature method for the presentation of polluting influences (dopants) into semiconductors and offers more adaptability than dissemination. For the case, in MOS transistors, particle implantation can be utilized to precisely modify the edge voltage. The normal infiltration profundity is dictated by the dopant, substrate materials, and increasing speed vitality. Particle implantation energies go from a few hundred to a few million electron volts, bringing about particle disseminations with normal profundities from < 10 nm to 10 microns. Portions run from 1011 molecules/cm2 for edge acclimation for covered dielectric arrangement.

As each of the ions has some kind of dopant mixed with it so as the collision happens it targets the host atom in its way. If the target temperature is sufficiently high then the self competing process of self-annealing starts to occur so that it starts to repair some or all of the damaged particles such case results in large increments of the size of the minimum thickness will increase.