Question
In: Physics
electron and hole of an intrinsic semiconductor of Germanium (Ge) each is 0.39 and 0.19 m^2/V.s...
electron and hole of an intrinsic semiconductor of Germanium (Ge) each is 0.39 and 0.19 m^2/V.s
a. find the concentration of the carrier and Ge conductivity at 300 K if the gap energy of Ge is 0.67 eV and the effective mass of electron and hole is 0.55 m0 and 0.37m0 respectively. where m0 is the mass of a still electron)
b. calculate the doping concentration (in m^-3) that must be added to Ge so that the conductivity increase up to 10^4 times
Solutions
genius_generous answered 2 years agoRelated Solutions
1-why the mobility of electron is higher than hole? 2-why effective mass of hole is greater...
1-why the mobility of electron is higher than hole?
2-why effective mass of hole is greater than electron?
3-why are holes heavier than electrons?
4- Explain effective mass for electron and hole?
1-why the mobility of electron is higher than hole? 2-why effective mass of hole is greater...
1-why the mobility of electron is higher than hole?
2-why effective mass of hole is greater than electron?
1-why the mobility of electron is higher than hole? 2-why effective mass of hole is greater...
1-why the mobility of electron is higher than hole?
2-why effective mass of hole is greater than electron?
3-why are holes heavier than electrons?
4- Explain effective mass for electron and hole?
1-why the mobility of electron is higher than hole? 2-why effective mass of hole is greater...
1-why the mobility of electron is higher than hole?
2-why effective mass of hole is greater than electron?
3-why are holes heavier than electrons?
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