In: Physics
A laser beam of intensity I irradiates at normal incidence a face of area A of a cubical sample of intrinsic silicon of volume V. The photons from the laser beam are absorbed uniformly throughout the Si sample.
(i) If the quantum efficiency of intrinsic Si is ?, determine an
expression for the electron-hole pair generation rate in the Si
sample.
(ii) Determine an expression for the excess carrier concentration, ??, under steady state conditions.
(iii) Calculate the ratio of the conductivity under illumination, ?light, to the conductivity without illumination, ?dark, for a Si sample of V =1 cm3,
A = 1 cm2, I = 1 mW cm-2, ? = 632.8 nm and ? = 0.3.