Consider a Fabry–Perot semiconductor laser diode operating at 1550 nm. The active region is a III–V...

Consider a Fabry–Perot semiconductor laser diode operating at 1550 nm. The active region is a III–V quaternary semiconductor alloy of InGaAsP (but quite close to being InGaAs). The LD has a cavity length of 250 μm. The refractive index of InGaAsP is approximately 3.60 and dn/dT = 2.5 * 10^-4 K^-1, the linear thermal expansion coefficient is 5.6 * 10^-6 K^-1. The bandgap of InGaAs follows the Varshi equation Eg = Ego - AT^2>(B + T) with Ego = 0.850 eV, A = 4.906 * 10^-4 eV K^-1, B = 301 K. Find the shift in the optical gain curve, and the emission wavelength for a given mode per unit temperature change. What is your conclusion?

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genius_generous answered 2 years ago

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