Question

In: Electrical Engineering

QUESTION 1 What is NOT a solid reason to recommend sputtering in Argon instead of e-beam...

QUESTION 1

  1. What is NOT a solid reason to recommend sputtering in Argon instead of e-beam deposition?

    1.

    You want purer films with no trapped inert gas.

    2.

    You want better film adhesion.

    3.

    You want to deposit a multicomponent film like, TiW.

    4.

    You want better step coverage.

10 points   

QUESTION 2

  1. What is NOT a solid reason to recommend e-beam deposition of aluminum over sputtering in Argon?

    1.

    We want the higher throughput (# wafers processed per hour) offered by e-beam deposition.

    2.

    The high temperatures required to get an acceptable deposition rate will scorch the aluminum film and degrade its resistivity.

    3.

    We want to avoid damaging the wafer by exposing it to a plasma.

    4.

    We want "line of sight" deposition to create special features that rely on portions of the wafer being blocked from deposition.

Solutions

Expert Solution

Question 1 ::

What is NOT a solid reason to recommend sputtering in Argon instead of e-beam deposition?

Explanation ::

Sputtering process involves ejecting material from a “target” that is a source onto a “substrate” (such as a silicon wafer) in a vacuum chamber. This effect is caused by the bombardment of the target by ionized gas which often is an inert gas such as argon. Sputtering is used extensively in the semiconductor industry to deposit thin films of various materials in integrated circuit processing. Anti-reflection coatings on glass for optical applications are also deposited by sputtering. Because of the low substrate temperatures used, sputtering is an ideal method to deposit metals for thin-film transistors. Perhaps the most familiar products of sputtering are low-emissivity coatings on glass, used in double-pane window assemblies. An important advantage of sputtering is that even materials with very high melting points are easily sputtered while evaporation of these materials in a resistance evaporator or Knudsen cell is difficult and problematic

Answer :: You want better film adhesion.

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Question 2 ::

What is NOT a solid reason to recommend e-beam deposition of aluminum over sputtering in Argon?

Answer :: The high temperatures required to get an acceptable deposition rate will scorch the aluminum film and degrade its resistivity.

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