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A boron nitride (BN) film was deposited using a reactive radiofrequency magnetron sputtering substrate. The deposition...

A boron nitride (BN) film was deposited using a reactive radiofrequency magnetron sputtering substrate. The deposition rate was 200nm/hr. The XPS compositional analysis showed that boron-to-nitrogen atomic ratio was 1/1 while the FTIR analysis indicated that the ratio of cubic phase (cBN) to hexagonal (hBN) phase was 55 % t0 45 %. What was the ion-to-deposition flux ratio when the ion current density was 4 mA/cm2? (Deposition area: 1/cm2; cBN mass density: ρcBN =3.48 g/cm3, Boron: Ma = 10.811 g/mol; Nitrogen: Ma = 14.0067 g/mol; hBN mass density: ρhBN =2.25 g/cm3; cBN mass density: ρcBN =3.48 g/cm3)

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